12 June 2001 Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices
Author Affiliations +
Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429735
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine
Abstract
Mechanisms of defect-formation in heterolayers compounds II-VI had considered. Influence of isovalent impurity on generated dot point defect, optical properties and radiation stabilizing of investigated layers has discussed. The basic parameters of some devices had considered.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Makhniy, V. P. Makhniy, V. E. Baranjuk, V. E. Baranjuk, N. V. Demich, N. V. Demich, V. V. Melnyk, V. V. Melnyk, I. V. Malimon, I. V. Malimon, Mikhail M. Slyotov, Mikhail M. Slyotov, B. M. Sobistchanskiy, B. M. Sobistchanskiy, E. V. Stets, E. V. Stets, } "Isovalent substitution: a perspective method of producing heterojunction optoelectronical devices", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429735; https://doi.org/10.1117/12.429735
PROCEEDINGS
5 PAGES


SHARE
Back to Top