12 June 2001 Photoprocesses in A2B6 whiskers
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Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001); doi: 10.1117/12.429747
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine
Abstract
CdTe needle-like crystals were grown by CTR method in CdTe-Br system. Their resistivity is changed from 10 to 1000 (Omega) (DOT)cm depending on crystal diameter: it increases with the increase of wire diameters from 50 to 250 micrometer. Specimens with (rho) > 10 (Omega) (DOT)cm are observed to be photosensitive at 300 K. Photoconductivity spectrum is shown to depend on the whisker diameters. A model explaining the whisker electronic and photoelectrical parameters and their dimensional dependencies is discussed. This model is based on account of the surface states.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. F. Bilyk, Igor S. Virt, S. S. Varshava, I. P. Ostrovskii, "Photoprocesses in A2B6 whiskers", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429747; https://doi.org/10.1117/12.429747
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