Photosensitive thin film metal-amorphous structures semiconductor

Ye. Lemeshevskaya; V. V. Mussil; Alexander P. Ovcharenko; Viktor P. Pilipenko

doi:10.1117/12.429752

12 June 2001 Photosensitive thin film metal-amorphous structures semiconductor

Ye. Lemeshevskaya, V. V. Mussil, Alexander P. Ovcharenko, Viktor P. Pilipenko

Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429752
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine

Abstract

The results of the light-sensitive three-layer structures Ag- PbI₂-chalcogenide vitreous semiconductors (Ge-As-Se, Ge- As-S, Ge-P-Se, Ge-P-S) optical investigation are presented. It was observed that their optical density D changed reversibly under cycle step-by-step laser illumination with different wavelengths (442 and 633 nm). The observed photoinduced spectral changes have been discussed in consideration of the disperse state of Ag in the PbI₂ layer and the formed diffraction gratings in semiconductor layer.

Citation Download Citation

Ye. Lemeshevskaya, V. V. Mussil, Alexander P. Ovcharenko, and Viktor P. Pilipenko "Photosensitive thin film metal-amorphous structures semiconductor", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); https://doi.org/10.1117/12.429752

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