12 June 2001 Photosensitive thin film metal-amorphous structures semiconductor
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Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429752
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine
Abstract
The results of the light-sensitive three-layer structures Ag- PbI2-chalcogenide vitreous semiconductors (Ge-As-Se, Ge- As-S, Ge-P-Se, Ge-P-S) optical investigation are presented. It was observed that their optical density D changed reversibly under cycle step-by-step laser illumination with different wavelengths (442 and 633 nm). The observed photoinduced spectral changes have been discussed in consideration of the disperse state of Ag in the PbI2 layer and the formed diffraction gratings in semiconductor layer.
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Ye. Lemeshevskaya, Ye. Lemeshevskaya, V. V. Mussil, V. V. Mussil, Alexander P. Ovcharenko, Alexander P. Ovcharenko, Viktor P. Pilipenko, Viktor P. Pilipenko, } "Photosensitive thin film metal-amorphous structures semiconductor", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429752; https://doi.org/10.1117/12.429752
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