12 June 2001 Photovoltaic effect in porous silicon heterostructures
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Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429750
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine
Abstract
It was investigated photosensitivity of single porous silicon heterostructures. Such heterostructures were created by electrochemical anodization of silicon monocrystal substrates. An experimental investigation of porSi/Si heterostructures was connected with current-voltage characteristics and photovoltaic effects. It was observed wide band photovoltaic sensitivity from 0.4 to 1.2 micrometer for different heterostructures. Using energy band configuration it was explained obtained curves. PorSi/Si heterostructure was also high sensitive to mechanical stresses. It was concluded that heterojunction on the basis porSi/Si plates may find application as wide-band photoconverters and tenzosensitivity devices.
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Liubomyr S. Monastyrskii, Liubomyr S. Monastyrskii, Petro P. Parandii, Petro P. Parandii, M. Panasiuk, M. Panasiuk, Igor B. Olenych, Igor B. Olenych, } "Photovoltaic effect in porous silicon heterostructures", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429750; https://doi.org/10.1117/12.429750
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