Electron cyclotron resonance plasma-assisted pulsed laser deposition of carbon nitride thin films

Wei Shi; JiaDa Wu; Jian Sun; Hao Ling; Zhifeng Ying; Zhuying Zhou; Fuming Li

doi:10.1117/12.456844

25 February 2002 Electron cyclotron resonance plasma-assisted pulsed laser deposition of carbon nitride thin films

Wei Shi, JiaDa Wu, Jian Sun, Hao Ling, Zhifeng Ying, Zhuying Zhou, Fuming Li

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456844
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

We have prepared carbon nitride thin films by using plasma assisted pulsed laser deposition. In this method, a graphite target was ablated by laser pulses in the environment of a nitrogen plasma generated from electron cyclotron resonance microwave discharge in pure nitrogen gas, while the growing film was simultaneously bombarded by the plasma stream. The deposited films were characterized by Rutherford backscattering spectroscopy (RBS), Fourier transform infrared (FTIR) spectroscopy, and Raman Spectroscopy. Films consisting purely of carbon and nitrogen with nitrogen content over at.50% were obtained on Si (100) substrates at low deposition temperatures (<80 degree(s)C). N atoms in the as-prepared films were found to be bound to C atoms through hybridized sp² and sp³ configurations. A strong influence of substrate bias voltage on the composition and bonding configuration in the films as well as on the deposition rate was observed.

Citation Download Citation

Wei Shi, JiaDa Wu, Jian Sun, Hao Ling, Zhifeng Ying, Zhuying Zhou, and Fuming Li "Electron cyclotron resonance plasma-assisted pulsed laser deposition of carbon nitride thin films", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456844

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