25 February 2002 GaN micromachining by short wavelength pulsed laser irradiation
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Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456899
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
GaN ablative etching using coaxial irradiation of KrF excimer laser and F2 laser has been explored. The etching process is consisted of pulsed laser ablation and successive acid treatment. Single pulse ablation using KrF excimer planarizes etched surface, however, multiple KrF irradiation roughens etched surface significantly. Small fraction of F2 laser simultaneously irradiated with KrF excimer laser improves surface roughness caused in the case of single-KrF irradiation. Irradiating delay time between both lasers is varied in order to investigate excitation mechanism as well as find optimum irradiation condition.
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Toshimitsu Akane, Toshimitsu Akane, Koji Sugioka, Koji Sugioka, Kotaro Obata, Kotaro Obata, Naoko Aoki, Naoko Aoki, Koichi Toyoda, Koichi Toyoda, Katsumi Midorikawa, Katsumi Midorikawa, } "GaN micromachining by short wavelength pulsed laser irradiation", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456899; https://doi.org/10.1117/12.456899
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