25 February 2002 Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target
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Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456843
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
We demonstrated the feasibility of the growth of GaN thin films from polycrystalline GaAs using reactive pulsed laser deposition. The films were grown on Si (100) substrates at temperatures lower than 80 degree(s)C. A bulk of polycrystalline GaAs was used as a target. Reactive nitrogen plasma was provided by electron cyclotron resonance (ECR) microwave discharge in pure nitrogen gas to assist the film growth. Composition analysis showed that the grown films are slightly N-rich, and arsenic can hardly be detected. A strong absorption peak corresponding to Ga-N stretching vibration in the hexagonal-type GaN crystals is clearly resolved from the IR absorption spectrum. The films exhibit transparency in the visible and near-IR regions. The band gap of the films was determined to be about 3.4eV. when excited by 325-nm light at 10.2 K, the grown films luminesce in the blue region.
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Jian Sun, Jian Sun, JiaDa Wu, JiaDa Wu, Hao Ling, Hao Ling, Wei Shi, Wei Shi, Zhifeng Ying, Zhifeng Ying, Xunmin Ding, Xunmin Ding, Zhuying Zhou, Zhuying Zhou, Fuming Li, Fuming Li, } "Gallium nitride films synthesized by reactive pulsed laser deposition from a GaAs target", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456843; https://doi.org/10.1117/12.456843
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