Growth of (001)-oriented PZT thin films on amorphous SiO2 by pulsed laser deposition

Jing Zhao; Li Lu; Carl V. Thompson; Yongfeng Lu; Wen Dong Song

doi:10.1117/12.456840

25 February 2002 Growth of (001)-oriented PZT thin films on amorphous SiO₂ by pulsed laser deposition

Jing Zhao, Li Lu, Carl V. Thompson, Yongfeng Lu, Wen Dong Song

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456840
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

Using pulsed laser deposition (PLD), (001)-textured Nb-doped Pb (Zr_0.52Ti_0.48)O₃ (PZT) films with highly restricted in-plane crystallographic alignments were successfully deposited on Si(001) wafers covered with amorphous SiO₂. MgO and SrTiO₃ (STO) films were used as buffer and seed layers, respectively, for growth of YBA₂Cu₃O₇ (YBCO) and PZT layers. The YBCO layer can serve as a bottom electrode for activation of PZT films. Variations in the deposition conditions for the MgO films were found to play a key role in the subsequent deposition of the oriented PZT thin films. MgO films deposited at an O₂ partial pressure of 200 mtorr, have a strong (100) texture, leading to subsequent deposition of PZT films with both a strong (100) texture and highly restricted in-plane orientations. Although the MgO and STO films show very strong crystallographic textures, their in-plane orientations are random. The restricted in-plane orientations were only observed in the YBCO and PZT films.

Citation Download Citation

Jing Zhao, Li Lu, Carl V. Thompson, Yongfeng Lu, and Wen Dong Song "Growth of (001)-oriented PZT thin films on amorphous SiO₂ by pulsed laser deposition", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456840

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