25 February 2002 Microstructures formed on silicon wafer by CO2 laser irradiation
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Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456859
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Laser bumps have been formed on the silicon surface with anisotropic patterns induced by the pulsed CO2 laser under the backside effect conditions. The microstructures are formed with periodic patterns, and vary with the laser parameters. The parallel narrow fringes have period around 2 micrometers , and the fringe orientation is in parallel with the laser polarization direction. The circular fringes with spacing around 1 micrometers appear when the laser energy increase. The fringe patterns were found to be independent on the laser pulses, therefore are re-writable. The bump formation mechanism is considered to be thermal capillary wave effect during the material melting and resolidification processes under laser irradiation. Whereas, the laser absorption may be induced by the hot electrons, or the thermal energy resulting from the laser interaction with the backside coating material.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weijie Wang, Weijie Wang, Yongfeng Lu, Yongfeng Lu, Chengwu An, Chengwu An, Minghui Hong, Minghui Hong, } "Microstructures formed on silicon wafer by CO2 laser irradiation", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456859; https://doi.org/10.1117/12.456859

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