Orientation dependence of kinetics of laser-induced liquid-solid phase transitions in A3B5 single crystals

Elena I. Gatskevich; Gennadii D. Ivlev

doi:10.1117/12.456866

25 February 2002 Orientation dependence of kinetics of laser-induced liquid-solid phase transitions in A₃B₅ single crystals

Elena I. Gatskevich, Gennadii D. Ivlev

Author Affiliations +

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456866
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

The phase transitions in A₃B₅ single crystals have been studied. GaAs, GaSb and InSb wafers oriented in (100) and (111) plains were irradiated by ruby (80 ns FWHM) and ArF excimer (10 ns, (lambda) equals193 nm) lasers. Dependence of melt duration (tau) on the irradiation energy density W was measured. The values of (tau) were determined from the time-resolved reflectivity measurements (TRR) at (lambda) equals1.06 (ruby laser) and 0.63 micrometers (ArF). The average discrepancies between (tau) ₁₀₀ and (tau) ₁₁₁ established for each semiconductor are related to somewhat slower velocity of crystal growth in <111> direction epitaxial process in this direction is characterized by lower crystallization temperature T_cr and by larger undercooling of the liquid phase. The values of T_cr(100) and T_cr(100) for InSb can differ by almost 10%. Increase in difference between (tau) ₁₁₁ and (tau) ₁₀₀ values going from GaAs to GaSb and to InSb correlates with the decrease in interface temperature and with the increase of average atomic mass, i.e., with the reduction of mobility and diffusion of atoms (ions) in binary melt.

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Elena I. Gatskevich and Gennadii D. Ivlev "Orientation dependence of kinetics of laser-induced liquid-solid phase transitions in A₃B₅ single crystals", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456866

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