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25 February 2002 Synthesis of pure C40 TiSi2 for Si wafer fabrication
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Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456893
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
A simple and novel salicidation process applying pulsed laser annealing as the first annealing step was used to induce TiSi2 formation. Both Raman spectroscopy and transmission electron microscope results confirm the formation of a new phase of Ti disilicide, the pure C40 TiSi2 after laser irradiation. Direct C54 phase growth on the basis of C40 template bypassing the C49 phase is accomplished at the second annealing temperature as low as 600 degree(s)C. Line width independent formation of the C54 phase was observed on patterned wafers using this salicidation process and fine line effect is thus eliminated.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Y. Chen, Zexiang Shen, S. Y. Xu, Alex K. See, Lap Hung Chan, and Wen Shen Li "Synthesis of pure C40 TiSi2 for Si wafer fabrication", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456893
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