Paper
25 February 2002 Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs
Author Affiliations +
Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456856
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
Temperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
JiNan Zeng, Yongfeng Lu, and Yasuo Oka "Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456856
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Excitons

Quantum wells

Light emitting diodes

Phonons

Time resolved spectroscopy

Luminescence

Scattering

Back to Top