25 February 2002 Ultra-line-narrowed F2 laser for microlithography
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Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456815
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
The Association of Super-Advanced Electronics Technologies (ASET) started The F2 Laser Lithography Development Project in March 2000, to clarify solutions of base F2 lithography technologies. In this project, we are developing an ultra line-narrowed F2 laser light source for exposure tools tat are employing dioptric projection optics. We have developed an intermediate engineering injection- locking laser system that has an oscillator laser and an amplifier to study the feasibility of an ultra line-narrowed F2 laser. A spectral bandwidth of <0.2pm (FWHM) at a repetition rate of 1000Hz and an average power of 14W has been achieved with this laser system. The laser output performance dependence on the relative delay between oscillator laser and amplifier is also measured.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Komori, Hiroshi Komori, Tatsuya Ariga, Tatsuya Ariga, Hidenori Watanabe, Hidenori Watanabe, Takahito Kumazaki, Takahito Kumazaki, Naoki Kitatochi, Naoki Kitatochi, Kotaro Sasano, Kotaro Sasano, Yoshifumi Ueno, Yoshifumi Ueno, Toshihiro Nishisaka, Toshihiro Nishisaka, Ryoichi Nohdomi, Ryoichi Nohdomi, Kazuaki Hotta, Kazuaki Hotta, Hakaru Mizoguchi, Hakaru Mizoguchi, Kiyoharu Nakao, Kiyoharu Nakao, } "Ultra-line-narrowed F2 laser for microlithography", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456815; https://doi.org/10.1117/12.456815
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