25 February 2002 Ultrafast laser-induced crystallization of amorphous silicon films
Author Affiliations +
Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002); doi: 10.1117/12.456891
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore
Abstract
Ultra-short pulsed laser irradiation was used to crystallize an a-Si film with a laser fluence of 0.12 J/cm2. The crystallization process was observed by time-resolved pump- and-probe imaging in the range of 0.2 ps to 100 ns. Reflectivity data along with post-processed SEM pictures provide evidence for a non-thermal ultra-fast solid-phase transition. A crystallization sequence based on atomic self- diffusion is suggested.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taeyul Choi, David J. Hwang, Constantine P. Grigoropoulos, "Ultrafast laser-induced crystallization of amorphous silicon films", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); doi: 10.1117/12.456891; https://doi.org/10.1117/12.456891
PROCEEDINGS
4 PAGES


SHARE
KEYWORDS
Crystals

Laser crystals

Reflectivity

Amorphous silicon

Picosecond phenomena

Silicon films

Ultrafast phenomena

Back to Top