A. A. Man'shina,1 A. V. Kurochkin,2 S. V. Degtyarev,2 Ya. G. Grigor'ev,3 A. S. Tverjanovich,3 Yu. S. Tver'yanovich,3 V. B. Smirnov2
1Russian Ctr. of Laser Physics/St. Petersburg Stat Univ. (Russia) 2Russian Ctr. of Laser Physics/St. Petersburg State Univ. (Russia) 3St. Petersburg State Univ. (Russia)
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Physical-chemical and optical properties of glassy system Ga-Ge-S, doped with Nd3+, Er3+ were treated from viewpoints of differential-temperature analysis, Raman and luminescence spectroscopy. Strong correlation between network structure and luminescence efficiency of Ga-Ge-S:Nd, Er system is established. Increase of Ga2S3 contents in Ga-Ge-S:Nd, Er system leads to forming of ternary structure units and enhances luminescence efficiency.
A. A. Man'shina,A. V. Kurochkin,S. V. Degtyarev,Ya. G. Grigor'ev,A. S. Tverjanovich,Yu. S. Tver'yanovich, andV. B. Smirnov
"Glasses of the Ga2S3-GeS2 system doped with rare-earth ions (Nd3+,Er3+) as active optical materials", Proc. SPIE 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, (30 May 2001); https://doi.org/10.1117/12.428351
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A. A. Man'shina, A. V. Kurochkin, S. V. Degtyarev, Ya. G. Grigor'ev, A. S. Tverjanovich, Yu. S. Tver'yanovich, V. B. Smirnov, "Glasses of the Ga2S3-GeS2 system doped with rare-earth ions (Nd3+,Er3+) as active optical materials," Proc. SPIE 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, (30 May 2001); https://doi.org/10.1117/12.428351