30 May 2001 Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation
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Proceedings Volume 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics; (2001) https://doi.org/10.1117/12.428352
Event: International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, 2000, Vladimir/Suzdal, Russian Federation
Abstract
The paper pursues an experimental investigation on solid- phase destruction of thin surface silicon layer (h approximately equals 10-4 cm) in vacuum, related to accumulation of dislocations under periodic action of short pulses. It has been concluded that the destruction of sample surface will be governed by competition of processes of dislocation growth and relaxation. It has been shown that the destruction of surface is caused by the requisite number Nc of laser pulses. The plots of Nc against power density and pulse repetition period have been constructed.
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Alexander F. Banishev, Alexander F. Banishev, Vladimir S. Golubev, Vladimir S. Golubev, Alexei Yu. Kremnev, Alexei Yu. Kremnev, } "Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation", Proc. SPIE 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, (30 May 2001); doi: 10.1117/12.428352; https://doi.org/10.1117/12.428352
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