Paper
29 June 2001 CNx films deposited using combined deposition method: pulsed laser deposition in the RF discharged nitrogen gas
J. Bulir, Miroslav Jelinek, Jan Lancok, M. Trchova, K. Jurek
Author Affiliations +
Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432850
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania
Abstract
Thin CNx films were deposited by pulsed laser deposition (KrF excimer laser) with additional radio-frequency discharge of the nitrogen gas. Nitrogen pressure was in the range from 1 to 40 Pa and r.f. power was adjusted to 100 W. The substrate temperature was changed in the range from room temperature to 800 degree(s)C. An influence of the substrate temperature on the film composition and structure was studied. The composition of the films was measured by wavelength dispersive x-ray spectroscopy. The N/C ratio of films deposited at room temperature almost reach 1; however, it decreased with increasing substrate temperature. Structure was studied using Fourier transformed infrared spectroscopy analysis. Presence of CequalsC, CequalsN, CequalsVN, N-H and O-H groups was confirmed. Optical properties were analyzed using UV-VIS reflection spectroscopy.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Bulir, Miroslav Jelinek, Jan Lancok, M. Trchova, and K. Jurek "CNx films deposited using combined deposition method: pulsed laser deposition in the RF discharged nitrogen gas", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432850
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Nitrogen

Oxygen

Protactinium

FT-IR spectroscopy

Carbon

Deposition processes

Pulsed laser deposition

Back to Top