29 June 2001 Characterization of anodic oxide for GaAs-based laser diodes
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Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432918
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania
Abstract
Anodic film oxide was deposited in a alcohol-glycol-water (AGW) solution on n-GaAs for passivation purpose in stripe technology for laser diodes. The characteristics of anodic oxide were measured by scanning electron microscopy (SEM), Rutherford backscattering (RBS) analysis and elastic recoil detection (ERD) techniques. The result indicates a complex oxide structure in the phase base Ga2O3:As2O3(1:1) joined together with carbon bonds. Due to the presence of carbon in anodic oxide, laser diodes are exposed to rapid degradation during operation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rodica V. Ghita, Rodica V. Ghita, D. Pantelica, D. Pantelica, F. Negoita, F. Negoita, S. Lazanu, S. Lazanu, } "Characterization of anodic oxide for GaAs-based laser diodes", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); doi: 10.1117/12.432918; https://doi.org/10.1117/12.432918
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