Oxidized porous silicon waveguides losses

G. Lamedica; M. Balucani; V. Bondarenko; A. Ferrari

doi:10.1117/12.432838

29 June 2001 Oxidized porous silicon waveguides losses

G. Lamedica, M. Balucani, V. Bondarenko, A. Ferrari

Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432838
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania

Abstract

The Oxidized Porous Silicon Waveguides (OPSWG) present the chance to realize waveguide in the visible range compatible with integrated circuit (IC) fabrication technology. In OPSWG the light is confined in dense silica surrounded by a buffer of porous oxidized silicon. In this paper some of the results of the European project OLSI N degree(s) 28.934 are discussed. The waveguides were fabricated using p-doped (100) and n-doped (100) and (111) silicon wafers to investigate the influence of the doping type and of silicon crystal orientation on the guiding properties and the thickness of the buffer layer was varied from 1 micrometers to 2.5 micrometers changing the anodization regimes and the propagation losses were measured. Two different topology of mask have been used to determine propagation and planar bending losses. Buried OPSWG, realized depositing one micron poly- silicon layer on top of waveguides, have been thermally treated and measurements have not shown a great difference in terms of propagation losses with surface OPSWG.

Citation Download Citation

G. Lamedica, M. Balucani, V. Bondarenko, and A. Ferrari "Oxidized porous silicon waveguides losses", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432838

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