29 June 2001 Ultraviolet radiation sensors on the basis of semiconductors
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Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432818
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania
This paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single- crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerian Dorogan, Valerian Dorogan, Tatiana Vieru, Tatiana Vieru, Mihail Manole, Mihail Manole, Roxana Savastru, Roxana Savastru, Tudor Zisu, Tudor Zisu, "Ultraviolet radiation sensors on the basis of semiconductors", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); doi: 10.1117/12.432818; https://doi.org/10.1117/12.432818


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