Comparison of Y3Al5O12:Ce0.05 phosphor coating methods for white-light-emitting diode on gallium nitride

Jun-Ho Yum; Soo-Yeon Seo; Seonghoon Lee; Yung-Eun Sung

doi:10.1117/12.450029

5 December 2001 Comparison of Y₃Al₅O₁₂:Ce_0.05 phosphor coating methods for white-light-emitting diode on gallium nitride

Jun-Ho Yum, Soo-Yeon Seo, Seonghoon Lee, Yung-Eun Sung

Author Affiliations +

Proceedings Volume 4445, Solid State Lighting and Displays; (2001) https://doi.org/10.1117/12.450029
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

White light was obtained by mixing blue light from the emission of a GaN chip and a yellow light by the fluorescence of a Y₃Al₅O₁₂:Ce_0.05 yellow phosphor. A uniform coating of yellow phosphor on a GaN chip and an optimized thickness of a phosphor layer were necessary for achieving efficient white LED. Several methods for coating yellow phosphor particles such as the slurry method, the settling method, the electrophoretic deposition (EPD), and the modified EPD were examined for preparing the phosphor layer. The properties of the phosphor layer prepared by these methods were examined using SEM, XRD, and photoluminescence. The intensity of white light and the harmony between blue light and yellow light were dependent on the thickness of the phosphor layer. The properties of the phosphor layer made by the EPD such as packing density, thickness and uniformity could be more easily controlled than the slurry and settling methods. Further weak adhesion strength of phosphor particles by the EPD could be overcome via the use of a UV curable PVA+ADC layer on the phosphor layer in the EPD.

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Jun-Ho Yum, Soo-Yeon Seo, Seonghoon Lee, and Yung-Eun Sung "Comparison of Y₃Al₅O₁₂:Ce_0.05 phosphor coating methods for white-light-emitting diode on gallium nitride", Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); https://doi.org/10.1117/12.450029

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