5 December 2001 Current blocking layer in GaN light-emitting diode
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Abstract
InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) was fabricated using a SiO2 current blocking layer (CBL) inserted underneath the p-pad electrode. The forward voltage, Vf at 20 mA for InGaN/GaN MQW LED with a CBL(VF=3.5 V) was slightly higher than that of the conventional InGaN/GaN MQW LED(VF=3.4V) due to the reduction in the total area of p-type metal contact between the transparent Pt layer and the p-GaN. However, the light- output power for InGaN/GaN MQW LED with a CBL at 20 mA was significantly increased by 62% compared to that for the conventional InGaN/GaN MQW LED structure. This increase in the light-output power can be attributed to the more amount of current injected into the active area of the LED through the light-transmitting metal layer and a reduced parasitic optical absorption in the p-pad electrode.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chul Huh, Ji-Myon Lee, Dong-Joon Kim, Seong-Ju Park, "Current blocking layer in GaN light-emitting diode", Proc. SPIE 4445, Solid State Lighting and Displays, (5 December 2001); doi: 10.1117/12.450040; https://doi.org/10.1117/12.450040
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