Edge emitting LEDs(EELEDs) can be used to generate full color scanned displays. Conventional LEDs lack the high speed modulation characteristics and radiance required for this application. InGaN-based EELEDs can be used for blue and green sources, and InGaP-based EELEDs for red sources. These semiconductor light sources are processed and packaged similar to laser diodes, but the primary source of output radiation is spontaneous emission. In this paper we describe the optical farfield characteristics of EELEDs, as well as their near-field and imaging properties. Comparisons are made to laser diode (LD) sources. The near- fields and far-fields of these devices have characteristics in common with both laser diode and conventional surface emitting LEDs. Smaller emitter dimensions produce laser- diode-like diffraction limited behavior, while larger emitter dimensions supporting higher order optical modes, produce broad far-field intensity distributions, and geometrical imaging characteristics. Partly due to the absence of optical gain, the wall plug efficiencies, and optical power levels, are also much lower than laser diodes.