Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool

Pierre Boher; Jean-Philippe Piel; Jean-Louis P. Stehle; Christopher Pickering; Alexandre Tarnowka

doi:10.1117/12.450081

10 December 2001 Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool

Pierre Boher, Jean-Philippe Piel, Jean-Louis P. Stehle, Christopher Pickering, Alexandre Tarnowka

Author Affiliations +

Proceedings Volume 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II; (2001) https://doi.org/10.1117/12.450081
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

For any industrial integrated metrology application three key issues must be addressed - feasibility, applicability and cost-effectiveness. This paper reports progress on the integration of spectroscopic ellipsometry (SE) in the cool-down chamber of an Applied Materials Epi Centura Cluster System. SE is capable of providing rapid information on layer thickness, composition, crystallinity, surface roughness, etc. However, major issues remain to be addressed for integration in commercial tools, including development of compact hardware with high stability and accuracy to fit in the accessible space, automatic alignment and movement systems, and calibration of chamber access windows. A novel SE instrument has been designed to interface to the cluster tool to demonstrate feasibility. The focused beam size allows measurements to be made in the scribe lines of patterned wafers using pattern recognition software, and linescans across a wafer radius are used to assess uniformity. Applicability of the technique is demonstrated on a series of complex structures based on thin Si and Si_1-xGe_x layers. Thickness and composition repeatability is estimated to be +/- 4 angstrom for 400 angstrom Si and Si_1-xGe_x layers, +/- 0.003 for x equals 0.12. Measurements may be made after each layer deposition and on the completed structure. The results are compared with off-line post-deposition characterization.

Citation Download Citation

Pierre Boher, Jean-Philippe Piel, Jean-Louis P. Stehle, Christopher Pickering, and Alexandre Tarnowka "Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool", Proc. SPIE 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II, (10 December 2001); https://doi.org/10.1117/12.450081

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KEYWORDS

Silicon

Calibration

Metrology

Wave plates

Semiconducting wafers

Spectroscopic ellipsometry

Germanium

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