10 December 2001 X-ray study of surfaces and interfaces
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Abstract
The analysis of the roughness of B4C films of different thickness as well as W/B4C multilayer mirrors of different periods is performed basing on AFM and x-ray scattering (XRS) measurements. It is demonstrated that the linear model of a film growth is able to describe the whole set of experimental data including films at initial island stage of growth, if suppose the relaxation processes of a film surface to depend on the film thickness. New approach to the inverse problem of x-ray reflectometry consisting in inferring the dielectric constant profile from the reflectivity data is shortly discussed.
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Victor E. Asadchikov, Inna N. Bukreeva, Angela Duparre, Igor V. Kozhevnikov, Yury S. Krivonosov, Christian Morawe, Mikhail V. Pyatakhin, Joerg Steinert, Alexander V. Vinogradov, Eric Ziegler, "X-ray study of surfaces and interfaces", Proc. SPIE 4449, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II, (10 December 2001); doi: 10.1117/12.450102; https://doi.org/10.1117/12.450102
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KEYWORDS
Reflectivity

X-rays

Scattering

Inverse problems

Multilayers

Interfaces

Spatial frequencies

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