Exploring anisotropy in removal rate for single crystal sapphire using MRF

Irina A. Kozhinova; Steven R. Arrasmith; John C. Lambropoulos; Stephen D. Jacobs; Henry J. Romanofsky

doi:10.1117/12.453626

27 December 2001 Exploring anisotropy in removal rate for single crystal sapphire using MRF

Irina A. Kozhinova; Steven R. Arrasmith; John C. Lambropoulos; Stephen D. Jacobs; Henry J. Romanofsky

Author Affiliations +

Proceedings Volume 4451, Optical Manufacturing and Testing IV; (2001) https://doi.org/10.1117/12.453626
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Magnetorheological (MR) fluids with two types of abrasives (diamond and alumina/spinel) were used to study anisotropy in removal rate for C-cut single crystal sapphire. Interferometrically flat, basal plates (0001) employed in the experiments were characterized by different degree of C- axis (small) tilt from normal. The removal rate anisotropy depends on the type of abrasive, with anisotropy being more pronounced for the alumina/spinel abrasive. The anisotropy exhibited 2-fold symmetry, with the C-axis lying in the plane of symmetry. Roughness was found to depend on the basal plate orientation and the type of abrasive used. Diamonds improved the initial surface roughness of a polished plate regardless of orientation, while alumina/spinel abrasives increased the roughness, especially in the down-the-steps direction of fluid flow with respect to basal plane inclination. The results of this polishing experiment are in agreement with earlier studies of anisotropy observed in wear experiments on spherical surfaces of single crystal sapphire along different crystallographic orientations.

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Irina A. Kozhinova, Irina A. Kozhinova, Steven R. Arrasmith, Steven R. Arrasmith, John C. Lambropoulos, John C. Lambropoulos, Stephen D. Jacobs, Stephen D. Jacobs, Henry J. Romanofsky, Henry J. Romanofsky, } "Exploring anisotropy in removal rate for single crystal sapphire using MRF", Proc. SPIE 4451, Optical Manufacturing and Testing IV, (27 December 2001); doi: 10.1117/12.453626; https://doi.org/10.1117/12.453626

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