27 December 2001 Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry
Author Affiliations +
Abstract
This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H2/CH4 or Ar/H2 gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al2O3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83 degrees is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H2 gasses.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bulent Cakmak, Richard V. Penty, and Ian H. White "Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry", Proc. SPIE 4451, Optical Manufacturing and Testing IV, (27 December 2001); doi: 10.1117/12.453629; https://doi.org/10.1117/12.453629
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top