12 November 2001 Electrical activation and electrical properties of arsenic-doped Hg 1-xCdxTe epilayers grown by MBE
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Abstract
The annealing and electrical properties of extrinsic in situ doped mercury cadmium telluride epilayers grown by molecular beam epitaxy (MBE) on B CdTe/Si and CdZnTe substrates are studied. The doping is performed with an elemental arsenic source. HgCdTe epilayers of CdTe mole fraction in the range of mid-wavelength IR are grown at substrate temperatures of 175-185 degrees C. The temperature dependent Hall effect characteristics of the grown samples are measured by the van der Pauw technique. A magnetic field of up to 0.8 T is used in these measurements. The analysis of the Hall coefficient in the temperature range of 40-300 K with a fitting based on a three-band non-parabolic Kane model, a fully ionized compensating donor concentration, and tow independent discrete acceptor levels is reported. Both as-grown and annealed samples are used in this study. All of the as-grown samples showed-type characteristics whereas annealed samples showed p-type characteristics. Activation annealing at different temperatures was performed. Conversion to p-type at lower than conventional annealing temperatures was achieved. Theoretical models are utilized to understand the dependence of the activated arsenic concentration on the annealing temperature.
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Yusuf Selamet, Yusuf Selamet, Giacomo Badano, Giacomo Badano, Christoph H. Grein, Christoph H. Grein, Paul Boieriu, Paul Boieriu, Vaidya Nathan, Vaidya Nathan, Sivalingam Sivananthan, Sivalingam Sivananthan, } "Electrical activation and electrical properties of arsenic-doped Hg 1-xCdxTe epilayers grown by MBE", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448162; https://doi.org/10.1117/12.448162
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