12 November 2001 Electrical activation and electrical properties of arsenic-doped Hg 1-xCdxTe epilayers grown by MBE
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The annealing and electrical properties of extrinsic in situ doped mercury cadmium telluride epilayers grown by molecular beam epitaxy (MBE) on B CdTe/Si and CdZnTe substrates are studied. The doping is performed with an elemental arsenic source. HgCdTe epilayers of CdTe mole fraction in the range of mid-wavelength IR are grown at substrate temperatures of 175-185 degrees C. The temperature dependent Hall effect characteristics of the grown samples are measured by the van der Pauw technique. A magnetic field of up to 0.8 T is used in these measurements. The analysis of the Hall coefficient in the temperature range of 40-300 K with a fitting based on a three-band non-parabolic Kane model, a fully ionized compensating donor concentration, and tow independent discrete acceptor levels is reported. Both as-grown and annealed samples are used in this study. All of the as-grown samples showed-type characteristics whereas annealed samples showed p-type characteristics. Activation annealing at different temperatures was performed. Conversion to p-type at lower than conventional annealing temperatures was achieved. Theoretical models are utilized to understand the dependence of the activated arsenic concentration on the annealing temperature.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yusuf Selamet, Yusuf Selamet, Giacomo Badano, Giacomo Badano, Christoph H. Grein, Christoph H. Grein, Paul Boieriu, Paul Boieriu, Vaidya Nathan, Vaidya Nathan, Sivalingam Sivananthan, Sivalingam Sivananthan, } "Electrical activation and electrical properties of arsenic-doped Hg 1-xCdxTe epilayers grown by MBE", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448162; https://doi.org/10.1117/12.448162


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