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12 November 2001 GaInAs/InP quantum well infrared photodetectors grown on Si substrates
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GaInAs/InP quantum well IR photodetectors (QWIP) were grown on Si substrate by metalorganic chemical vapor deposition. The growth condition of InP buffer layer on Si was optimized and its crystal quality was evaluated by high-resolution x- ray diffraction and atomic force microscopy experiments. Two different in-situ thermal cyclic annealing techniques were used to reduce the threading dislocation density in the InP- on-Si. The new thermal annealing with larger temperature range was found to improve the quality of InP-on-Si dramatically. QWIP-on-Si samples with these two different thermal annealing were prepared. Important detector properties, like dark current, spectral response, peak responsivity, and specific detectivity were studied and compared with a QWIP-on-InP sample with identical structure. Small blue shift was observed in both QWIP-on-Si detector's spectral responses. Record high detectivity of 2.3 X 109 cmHz/W was obtained for one QWIP-on-Si detector at 77K.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, J. Jiang, Christopher Louis Jelen, and Gail J. Brown "GaInAs/InP quantum well infrared photodetectors grown on Si substrates", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001);

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