High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE

Silviu Velicu; Renganathan Ashokan; Christoph H. Grein; Sivalingam Sivananthan; Paul Boieriu; Don Rafol

doi:10.1117/12.448173

12 November 2001 High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE

Silviu Velicu, Renganathan Ashokan, Christoph H. Grein, Sivalingam Sivananthan, Paul Boieriu, Don Rafol

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448173
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

The advantages of mercury cadmium telluride for 'HOT' IR detector applications are discussed. Molecular beam epitaxy (MBE) is used to grow advanced device structures for this purpose. MBE offers the potential to grow HgCdTe heterostructure layers on large silicon substrates leading to very large format and high performance IR focal plane array sin the future. Preliminary material and device properties achieved p⁺-v-n⁺ device structures grown on 3 inch oriented silicon wafers are discussed.

Citation Download Citation

Silviu Velicu, Renganathan Ashokan, Christoph H. Grein, Sivalingam Sivananthan, Paul Boieriu, and Don Rafol "High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448173

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