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12 November 2001 New advanced two-color (MW/LW) infrared detector and focal plane array design using InGaAs/InAlAs quantum well infrared photodetectors on InP substrates
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Abstract
This paper provides the design details for a new two-color quantum-well infrared photodetector for use in advanced thermal imaging. The single pixel experimental data used in the evolution of this design is discussed in significant detail. Using the knowledge gained from extensive measurements comparing miniband transport with bound-to-quasi-bound QWIPs and also double and triple coupled-well QWIPs with the more conventional single-well QWIPs, a two-color design is presented. The detector design provides for a lattice-matched growth and superior response in the MWIR spectral region, while keeping the dark currents from the LWIR portion of the detector to a minimum. The architecture will allow for the MWIR and LWIR stacks to be biased separately and also for the signals to be read independently.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen W. Kennerly, John W. Little, Arnold C. Goldberg, and Richard P. Leavitt "New advanced two-color (MW/LW) infrared detector and focal plane array design using InGaAs/InAlAs quantum well infrared photodetectors on InP substrates", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448186
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