12 November 2001 RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon
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Abstract
We were investigated photoemission properties of porous silicon capsulated by thin films SiOx,ZnS,Al2O3. This films were deposited by RF magnetron sputtering in argon-oxygen atmosphere and had crystalline structure. Light-emission spectra such double structure in visible and infra-red region were investigated.
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Liubomyr S. Monastyrskii, Liubomyr S. Monastyrskii, Roman M. Kovtun, Roman M. Kovtun, Andrii P. Vlasov, Andrii P. Vlasov, Sergii O. Kostukevich, Sergii O. Kostukevich, } "RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); doi: 10.1117/12.448181; https://doi.org/10.1117/12.448181
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