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13 November 2001 Electrochromic tungsten oxide films for variable infrared reflectance devices
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The dependence of the infrared spectral optical constants, n(lambda ) and k(lambda ), of electrochromic tungsten oxide thin films, prepared by reactive magnetron sputtering at different substrate temperatures, on the quantities of charge, q, inserted has been determined from spectrophotometric measurements of transmittance and reflectance. For WO3 films deposited at temperatures greater than 200 degree(s)C significant infrared absorption is observed to rise with increasing levels of charge insertion. For the most crystalline films prepared at temperatures greater than 350 degree(s)C the rates of change dn(lambda )/dq and dk(lambda )/dq are greatest. The results provide essential design data for variable reflectance/emittance devices. Rear surface devices, which mask the reflectance of a highly reflective rear surface mirror through a charge dependent increase in k(lambda ), have been successfully demonstrated using either liquid or solid electrolytes. Monolithic devices have been prepared using a hybrid combination of sputtered and electron-beam evaporated coatings.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael G. Hutchins, Jose M. Gallego, Paul E. Y. Milne, Dawn Jeffrey, Ian D. Brotherston, E. O'Keefe, A. John Topping, and N. S. Butt "Electrochromic tungsten oxide films for variable infrared reflectance devices", Proc. SPIE 4458, Solar and Switching Materials, (13 November 2001);


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