Charge-based deep-level transient spectroscopy of poly(p phenylenevinylene) light-emitting diodes

Thien Phap Nguyen; Philippe Le Rendu; Olivier Gaudin; Richard B. Jackman

doi:10.1117/12.457468

27 February 2002 Charge-based deep-level transient spectroscopy of poly(p phenylenevinylene) light-emitting diodes

Thien Phap Nguyen, Philippe Le Rendu, Olivier Gaudin, Richard B. Jackman

Proceedings Volume 4464, Organic Light-Emitting Materials and Devices V; (2002) https://doi.org/10.1117/12.457468
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Charge based deep level transient spectroscopy (Q-DLTS) has been used to investigate the defect states of poly (p phenylene vinylene)(PPV) light emitting diodes. Studies in the temperature range 250-315K show the presence of two carrier trapping centers in the polymer bulk: a majority carrier trap at 0.5 eV with a cross section of 10^-16cm² and a minority carrier trap at 0.4eV with a cross section of 10^-19cm². The results are compared and discussed with those previously reported in PPV based diodes using other techniques to determine the trap parameters in the polymer.

Citation Download Citation

Thien Phap Nguyen, Philippe Le Rendu, Olivier Gaudin, and Richard B. Jackman "Charge-based deep-level transient spectroscopy of poly(p phenylenevinylene) light-emitting diodes", Proc. SPIE 4464, Organic Light-Emitting Materials and Devices V, (27 February 2002); https://doi.org/10.1117/12.457468

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