21 December 2001 Design of organic transistor semiconductors for logic elements, displays, and sensors
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The early demonstrations of field-effect transistors based on organic semiconductors with high dynamic range utilized single devices incorporating p-channel materials such as thiophene oligomers and pentacene. Through end-group substitution and use of electron-deficient cores, we have built a library of semiconductors with a variety of attributes, including low off-current, n-channel function and chemical sensitivity. Devices containing these materials can be assembled to form complementary circuits, pixel drivers, and chemoselective sensors. Specific properties of these materials have led to a new approach to a polymer-based memory element.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Howard Edan Katz, Howard Edan Katz, Andrew J. Lovinger, Andrew J. Lovinger, X. Michael Hong, X. Michael Hong, Ananth Dodabalapur, Ananth Dodabalapur, Jerainne Johnson, Jerainne Johnson, Bo-Cheng Wang, Bo-Cheng Wang, Krishnan Raghavachari, Krishnan Raghavachari, } "Design of organic transistor semiconductors for logic elements, displays, and sensors", Proc. SPIE 4466, Organic Field Effect Transistors, (21 December 2001); doi: 10.1117/12.451474; https://doi.org/10.1117/12.451474

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