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21 December 2001 Dynamic and lifetime measurements of polymer OFETs and integrated plastic circuits
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Organic Field-effect Transistors (OFETs) with poly(3-alkylthiophene) (P3AT) as semiconductor on flexible polymeric substrate and organic insulator in top gate construction were prepared. These transistors show a high field-effect mobility, good saturation behavior for low biases and rather high on-off ratio. The transistors were characterized through dynamic and lifetime measurements. A switching speed of 38 kHz at a 3 dB modulation depth was reached in a single transistor. The shelf-lives of the transistors exceeded six months without any special encapsulation. In addition different integrated plastic circuits (IPC) were constructed consisting of several organic transistors including NAND/NOR gates, bi-stable flip-flops and ring-oscillators with a oscillating frequency of 68 Hz.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juergen Ficker, Andreas Ullmann, Walter Fix, Henning Rost, and Wolfgang Clemens "Dynamic and lifetime measurements of polymer OFETs and integrated plastic circuits", Proc. SPIE 4466, Organic Field Effect Transistors, (21 December 2001);


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