27 December 2001 Low-energy ion implantation-induced control of InP-based heterostructure properties
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Abstract
In this paper we show that low energy ion implantation of InP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a spatial control of the bandgap profile of the heterostructure, there is a list of requirements that have to be fulfilled. We have fabricated high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing for integration. We also adapted this intermixing process to specific heterostructures in order to obtain submicrometer bandgap tuning spatial control.
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Vincent Aimez, Vincent Aimez, Jacques Beauvais, Jacques Beauvais, Dominique Drouin, Dominique Drouin, Jean Beerens, Jean Beerens, Denis Morris, Denis Morris, Serge Jandl, Serge Jandl, } "Low-energy ion implantation-induced control of InP-based heterostructure properties", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); doi: 10.1117/12.452544; https://doi.org/10.1117/12.452544
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