27 December 2001 Time-resolved studies of photoluminescence from proton irradiated and thermally annealed a-SiC:H alloys
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Abstract
We have studied yield and time evolution of pulsed laser induced photo-luminescence (PL) in proton irradiated and thermally annealed amorphous hydrogenated silicon carbon alloys prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The fluorescence spectra are taken at room temperature, using 532 nm, 40 ps laser pulses from a cw pulsed YLF laser source. Three major fluorescence channels have been observed. The corresponding decay times are found to be largely independent from proton irradiation and thermal annealing. Proton irradiation lowers the luminescence yield until it becomes practically quenched for fluences higher than approximately 1016 cm-2. The luminescence yield of irradiated samples, however, recovers after thermal annealing and the observed average decay time of the PL intensity signal becomes faster by at least a factor of three compared to the one of the as- deposited sample. Lack of correlation between yield and average time decay suggests a very simple phenomenological model which allows evaluation of the non radiative time constant. The latter is linearly correlated with the photoluminescence yield. Our model suggests that radiative recombination occurs via exciton decay while the non radiative recombination is driven by trapping of carriers in defects states.
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Pietro Baeri, Andrea Marco Malvezzi, Riccardo Reitano, "Time-resolved studies of photoluminescence from proton irradiated and thermally annealed a-SiC:H alloys", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); doi: 10.1117/12.452557; https://doi.org/10.1117/12.452557
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