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27 December 2001 Using scanning probe microscopy and nanomoter surface profiler of DEKTAK for determination of thermal stress in quasi-monolithic integration technology (QMIT)
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Abstract
In this paper, application of scanning probe microscopy (SPM) and nanometer surface profiler of DEKTAK for determination of thermal stress in standard structure of QMIT is described. A three dimension finite element (3DFE) thermal stress simulator, a scanning probe microscopy measurements and nanometer surface profiler accompanied with a Peltier element (PE) have been used to determine the thermal stress distribution in the standard structure of QMIT. In this method by measuring and mapping the surface profile of Si-wafer around the embedded devices using SPM and DEKTAK the induced thermal stress is determined. Effects of different parameters such as baking temperature, power dissipation of the embedded GaAs-FET, geometry and elastic properties of thermal conductive epoxy have been described in details. Remarkable agreement between calculated and measured displacements created by thermal stress was found.
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Mojtaba Joodaki, Teoman Senyildiz, Guenter Kompa, Rainer Kassing, and Hartmut Hillmer "Using scanning probe microscopy and nanomoter surface profiler of DEKTAK for determination of thermal stress in quasi-monolithic integration technology (QMIT)", Proc. SPIE 4468, Engineering Thin Films with Ion Beams, Nanoscale Diagnostics, and Molecular Manufacturing, (27 December 2001); https://doi.org/10.1117/12.452550
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