Paper
27 March 1984 Sexafs Studies Of Nickel Silicide Nucleation On Si(111)
F Comin, J. E Rowe, P. H. Citrin
Author Affiliations +
Proceedings Volume 0447, Science with Soft X-Rays; (1984) https://doi.org/10.1117/12.939187
Event: 1983 Brookhaven Conference: Science with Soft X-Rays, 1983, Upton, United States
Abstract
The direct structure determination of the silicide formed from < 1 monolayer of Ni deposited on room temperature Si(111) leads to a model for silicide growth and interface formation. The model forms a basis for understanding many of the photoemission, ion scattering, and microscopy results in this coverage regime.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F Comin, J. E Rowe, and P. H. Citrin "Sexafs Studies Of Nickel Silicide Nucleation On Si(111)", Proc. SPIE 0447, Science with Soft X-Rays, (27 March 1984); https://doi.org/10.1117/12.939187
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KEYWORDS
Nickel

Silicon

Chemical species

Interfaces

Transmission electron microscopy

Ions

Data modeling

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