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27 December 2001 Impact of alloy composition on the noise behavior of heterostructure devices at millimeter wave frequencies
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Abstract
The influence of alloy composition on the noise behavior of heterostructure semiconductor devices is investigated by using a rigorous two-dimensional physical simulator. The model takes into account non-stationary transport properties and quantization effects to allow a better understanding of the carrier transport properties inside the heterostructure devices and consequently to explain the noise performance of these devices by making use of the microscopic nature of the model. As an example, the model is applied to study the effects of alloy composition and the resulting band discontinuity on the 2DEG properties and on the noise performance of Hetero-FETs at millimeter-wave frequencies, and to extract the optimum alloy composition which leads to the minimum noise figure in different frequency ranges.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Abou-Elnour and Ossama A. Abo-Elnor "Impact of alloy composition on the noise behavior of heterostructure devices at millimeter wave frequencies", Proc. SPIE 4490, Multifrequency Electronic/Photonic Devices and Systems for Dual-Use Applications, (27 December 2001); https://doi.org/10.1117/12.455420
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