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14 November 2001 Characterization of high-quality synthetic diamond crystals by μm-resolved x-ray diffractometry and topography
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Abstract
We have conducted a systematic characterization of (111)- and (100)- oriented synthetic diamond crystals comparing the best presently available specimens of two types (Ib and IIa). The samples were grown by the two major diamond producers, namely the De Beers Industrial Diamonds (Pty) Ltd. in South Africa and the Sumitomo Electric Industries Ltd. in Japan. Double-crystal x-ray diffractometry with microscopic spatial resolution and x-ray topography were employed. The type IIa crystals showed much less pronounced defect structure than the Ib crystals for the (100)- orientation, but the (111) samples were comparable. A clear correlation between the distribution of nitrogen impurities in the Ib crystals and the defect structure was observed. The rocking curve widths from small regions of all specimens were very close to theoretical values on the arcsec level, whereas for larger sample areas they were broadened due to both local defects and crystal curvature. The quality of the IIa crystals from De Beers and Sumitomo was comparable.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joanna Hoszowska, Andreas K. Freund, Tetsuya Ishikawa, Jacques P.F. Sellschop, M. Rebak, R. C. Burns, J. O. Hansen, D. L. Welch, and C. E. Hall "Characterization of high-quality synthetic diamond crystals by μm-resolved x-ray diffractometry and topography", Proc. SPIE 4501, X-Ray Mirrors, Crystals, and Multilayers, (14 November 2001); https://doi.org/10.1117/12.448483
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