14 November 2001 Influence of deposition parameters on the reflectivity of multilayer hard x-ray mirrors
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Abstract
We present the results of a study of the influence of the deposition process parameters on the X-ray reflectivity of multilayer mirrors for applications at energies above 10 keV. The coating process used is DC magnetron sputtering and we have begun an optimization analysis for two material combinations: W/Si and Pt/C. The following process parameters were considered: argon pressure, distance between cathodes and substrate, and sputtering cathode currents. The samples are coated on 2' polished silicon wafers and their X-ray reflectivity is measured by performing a specular scan with an 8.05 keV (Cu K-alpha) X-ray beam. The reflectivity scans were analyzed with the IMD software and the fitted interface roughness values were correlated with the deposition parameters. The analysis of variance (ANOVA) statistical treatment of the data allows the determination of the contribution of each process parameter to the reflectivity and establishes which of the parameters need tighter control.
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Adrian Ivan, Ricardo J. Bruni, Paul Gorenstein, Suzanne E. Romaine, "Influence of deposition parameters on the reflectivity of multilayer hard x-ray mirrors", Proc. SPIE 4501, X-Ray Mirrors, Crystals, and Multilayers, (14 November 2001); doi: 10.1117/12.448487; http://dx.doi.org/10.1117/12.448487
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KEYWORDS
Argon

Reflectivity

Silicon

Chemical species

Interfaces

Sputter deposition

Multilayers

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