Lead Iodide purified by zone refining, sublimation and evaporation and without purification was used as starting material for growing platelets by the vapor transport method. Growth was performed at vacuum and at 500 mmHg of Ar, during times from 10 to 25 days. Platelets grew at 200 -250 degree(s)C less than the source temperature, in the zone of maximum temperature gradient and perpendicular to the ampoule wall. Growth was performed several times and results were reproducible. Crystals have rectangular or hexagonal (0 0 1) faces, sizes up to 4x6 mm2 and thickness from 50 to 250 micrometers , an exceptional good optical clarity and reflecting surfaces. Purity and stoichiometry of starting materials were determined by Inductively Coupled Plasma and wet techniques. Platelets were characterized by optical microscopy. Radiation detectors were fabricated with them and detector current density and apparent resistivity were determined by I-V curves, giving results 300 pA/cm2 (30V) and 1013 (Omega) .cm. X-ray spectra were performed determining detector's energy resolution for different emissions, giving a resolution of 1 keV in the range of 10 - 20 keV radiations. According to electrical and spectrometric performance, optical microscopy and production yields, it was not necessary to use high purity starting material for obtaining excellent platelets. Correlation between optical and electrical properties of the crystals grown from this method and others previously grown from the melt are also discussed. Comparison between the growth of lead iodide platelets and mercuric iodide ones is included.