18 December 2001 Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configurations
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Abstract
This study is concerned with the simulation and design of low-noise front-end electronics monolithically integrated on the same high-resistivity substrate as multielectrode silicon detectors, in a process made available by the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST) of Trento, Italy. The integrated front-end solutions described in this paper use N-channel JFETs as basic elements. The first one is based upon an all-NJFET charge preamplifier designed to match detector capacitances of a few picofarads and available in both a resistive and a non resistive feedback configuration. In the second solution, a single NJFET in the source-follower configuration is connected to the detector, while its source is wired to an external readout channel through an integrated capacitor.
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Lodovico Ratti, Lodovico Ratti, Massimo Manghisoni, Massimo Manghisoni, Valerio Re, Valerio Re, Valeria Speziali, Valeria Speziali, } "Integrated front-end electronics in a detector compatible process: source-follower and charge-sensitive preamplifier configurations", Proc. SPIE 4507, Hard X-Ray and Gamma-Ray Detector Physics III, (18 December 2001); doi: 10.1117/12.450752; https://doi.org/10.1117/12.450752
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