19 December 2001 Electrical properties of polycrystalline mercuric iodide x-ray detectors
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Abstract
New results for polycrystalline HgI2 detectors are reported here. Due to its decent electrical properties and high stopping power for X-rays and gamma rays, HgI2 is a good candidate for many medical imaging applications. HgI2 were deposited by a hot wall Physical Vapor Deposition (PVD) method, and the electrical properties of the films, including X-ray response and dark current data are reported. Results of imaging capabilities and spatial resolution obtained by polycrystalline HgI2 deposited onto a 2'x2' TFT imaging array on an amorphous silicon substrate are also given. These tests were carried out at Xerox-PARC Research Center.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haim Hermon, Robert A. Street, Leonid Melekhov, Asaf Zuck, Alexander I. Vilensky, Steve E. Ready, George Zentai, Michael M. Schieber, Larry D. Partain, "Electrical properties of polycrystalline mercuric iodide x-ray detectors", Proc. SPIE 4508, Penetrating Radiation Systems and Applications III, (19 December 2001); doi: 10.1117/12.450792; https://doi.org/10.1117/12.450792
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