New method for simulating charging effects on specimens in electron beam testing

Naoto Kihara; Erika Kanematsu; Yoshinobu Kimura; Hiroshi Hayashi; Noriyuki Ishihara

doi:10.1117/12.451279

21 December 2001 New method for simulating charging effects on specimens in electron beam testing

Naoto Kihara, Erika Kanematsu, Yoshinobu Kimura, Hiroshi Hayashi, Noriyuki Ishihara

Proceedings Volume 4510, Charged Particle Detection, Diagnostics, and Imaging; (2001) https://doi.org/10.1117/12.451279
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

This paper describes a new numerical method capable of handling the scattering, the accumulation and the diffusion of electrons and holes in the specimen with 2D structure in a section, perpendicular to the top surface, made up of metals, semiconductors and insulators. The method comprises three parts; 1. Monte Carlo calculations for the scattering of electrons, 2. Numerical techniques for determining the accumulation of electrons and holes and the potentials, 3. Semiconductor Device Simulation techniques capable of modeling and analyzing the electron diffusion distribution. Preliminary testing on the performance is done, and the result shows that this method give essential information to understand charging characteristics such as a distribution of electrons and holes, and potentials in a stationary equilibrium. The details of the model are described. And the computation of the potentials in a specimen using this method and the conventional Monte Carlo calculation are compared. Examples for extended application are also shown.

Citation Download Citation

Naoto Kihara, Erika Kanematsu, Yoshinobu Kimura, Hiroshi Hayashi, and Noriyuki Ishihara "New method for simulating charging effects on specimens in electron beam testing", Proc. SPIE 4510, Charged Particle Detection, Diagnostics, and Imaging, (21 December 2001); https://doi.org/10.1117/12.451279

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