28 June 2001 Electroluminescent microdisplays based on Al/porous silicon Schottky junctions
Author Affiliations +
Proceedings Volume 4511, Advanced Display Technologies: Basic Studies of Problems in Information Display (FLOWERS 2000); (2001) https://doi.org/10.1117/12.431261
Event: Advanced Display Technologies: Basic Studies of Problems in Information Display (FLOWERS'2000), 2000, Moscow, Russian Federation
Abstract
Al/porous silicon light emitting Schottky junctions for electroluminescent microdisplays are discussed. Bright light emission, visible by naked eye, is observed under reverse bias. The current level at which the EL starts is around 1 (mu) A for pixel area of 4 by 4 micrometers 2 at applied voltages in the range of -5 V. The light emissions intensity increases with increasing of current density. EL spectra are broad, covering the whole visible range. The high time stability was observe for all tested devices: the EL intensity did not show considerable changes even after more than one month of continuous operation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Lazarouk, S. Lazarouk, Alexander Smirnov, Alexander Smirnov, } "Electroluminescent microdisplays based on Al/porous silicon Schottky junctions", Proc. SPIE 4511, Advanced Display Technologies: Basic Studies of Problems in Information Display (FLOWERS 2000), (28 June 2001); doi: 10.1117/12.431261; https://doi.org/10.1117/12.431261
PROCEEDINGS
4 PAGES


SHARE
Back to Top