Silicon micromechanical sensors model of piezoresistivity

Jan M. Lysko

doi:10.1117/12.435901

8 August 2001 Silicon micromechanical sensors model of piezoresistivity

Jan M. Lysko

Proceedings Volume 4516, Optoelectronic and Electronic Sensors IV; (2001) https://doi.org/10.1117/12.435901
Event: Optoelectronic and Electronic Sensors IV, 2000, Gliwice, Poland

Abstract

Application of the piezo resistivity model to estimate valence and conduction bands shifts induced by the mechanical stress is presented. Parameters of the silicon pressure and acceleration sensor, which are under development in the ITE, Warsaw, were used. Geometrical and technological data were used in calculations of the silicon energy band structure and longitudinal coefficient of the piezo resistivity.(pi) _L.

Citation Download Citation

Jan M. Lysko "Silicon micromechanical sensors model of piezoresistivity", Proc. SPIE 4516, Optoelectronic and Electronic Sensors IV, (8 August 2001); https://doi.org/10.1117/12.435901

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